Piezoelectric/electrostrictive device

ABSTRACT

A piezoelectric/electrostrictive device includes a ceramic substrate having a pair of mutually opposing thin plate sections, a fixed section for supporting the thin plate sections, and movable sections disposed at ends of the pair of thin plate sections. The piezoelectric/electrostrictive device has a portion of each movable section opposed to the fixed section, the portion being formed in a stepped form so that respective attachment surfaces are provided with steps. Cutouts (cutaways) are formed at portions of an inner wall of the fixed section near the thin plate sections. Further, steps are provided on inner walls of the cutouts disposed on the sides of the thin plate sections.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.10/236,864, filed Sep. 6, 2002, now U.S. Pat. No. 6,897,600, which inturn claims the benefit under 35 USC §119(e) of U.S. ProvisionalApplication Ser. No. 60/322,185, filed Sep. 11, 2001, the entireties ofwhich are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to a piezoelectric/electrostrictive devicecomprising a ceramic substrate having a pair of mutually opposing thinplate sections, a fixed section for supporting the thin plate sections,and movable sections disposed at ends of the pair of thin platesections.

BACKGROUND OF THE INVENTION

In the present art, a piezoelectric/electrostrictive device such as anactuator element or a sensor element, which uses apiezoelectric/electrostrictive layer, is produced as follows. A wiringpattern made of one electrode layer is formed on a ceramic substrate byprinting, for example. A piezoelectric/electrostrictive layer is furtherformed thereon by printing, followed by sintering to fix the layer.After that, a wiring pattern made of another electrode layer is formed(see, for example, Japanese Laid-Open Patent Publication No.2001-320103).

The piezoelectric/electrostrictive device can be used as an actuatorelement in which an electric field is applied to thepiezoelectric/electrostrictive layer by supplying an electric signal tothe wiring pattern so that the piezoelectric/electrostrictive layer isconsequently displaced. The device can be also used as a sensor elementin which an electric signal generated depending on the pressure appliedto the piezoelectric/electrostrictive layer is outputted from the wiringpattern.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide thepiezoelectric/electrostrictive device which makes it possible to enhanceshock resistance.

According to the present invention, there is provided apiezoelectric/electrostrictive device comprising a ceramic substratehaving a pair of mutually opposing thin plate sections, a fixed sectionfor supporting the thin plate sections, and movable sections disposed atends of the pair of thin plate sections. At least one step is formed onan inner wall of at least one of the thin plate sections and the step isintegrated into one unit together with at least one of the movablesections.

Accordingly, the number of stress concentration points is increased atthe boundary portion between the thin plate section and the movablesection so that the stress concentration points are dispersed. Thus, itis possible to decrease the stress which would be otherwise concentratedon each spot, and it is possible to enhance the shock resistance.

The height of the step is desirably not more than the thickness dprovided that the thickness of the thin plate sections is d. The heightof the step is preferably not more than d/2. Specifically, the height ofthe step is desirably within a range of 2 μm to 100 μm and preferablywithin a range of 5 μm to 70 μm.

The length of the step is desirably not less than d/2. Specifically, thelength of the step is not less than 2 μm, preferably not less than 10μm, and more preferably not less than 50 μm.

According to another aspect of the present invention, there is provideda piezoelectric/electrostrictive device comprising a ceramic substratehaving a pair of mutually opposing thin plate sections, a fixed sectionfor supporting the thin plate sections, and movable sections disposed atends of the pair of thin plate sections. A boundary portion between eachof the movable sections and each of the thin plate sections is formed ina curved form.

Accordingly, it is possible to eliminate the stress concentration pointat the boundary portion between the thin plate section and the movablesection, and it is possible to enhance the shock resistance.

The boundary portion, which is formed in the curved form, desirably hasa radius of curvature of not less than 5 μm. The radius of curvature ispreferably not less than 10 μm and more preferably not less than 20 μm.

According to still another aspect of the present invention, there isprovided a piezoelectric/electrostrictive device comprising a ceramicsubstrate having a pair of mutually opposing thin plate sections, afixed section for supporting the thin plate sections, and movablesections disposed at ends of the pair of thin plate sections. A boundaryportion between each of the movable sections and each of the thin platesections is formed to have an obtuse angle.

Accordingly, the number of stress concentration points is increased atthe boundary portions between the thin plate sections and the movablesections so that the stress concentration points are dispersed. Thus, itis possible to decrease the stress which would be otherwise concentratedon each spot, and it is possible to enhance the shock resistance.

According to still another aspect of the present invention, there isprovided a piezoelectric/electrostrictive device comprising a ceramicsubstrate having a pair of mutually opposing thin plate sections, afixed section for supporting the thin plate sections, and movablesections disposed at ends of the pair of thin plate sections. An endsurface of each of the movable sections is deviated toward the fixedsection as compared with a tip surface of each of the thin platesections.

Accordingly, when a component is interposed between the movablesections, the movable sections define the amount (thickness) and theposition (adhesion area) of the adhesive for attachment.

According to still another aspect of the present invention, there isprovided a piezoelectric/electrostrictive device comprising a ceramicsubstrate having a pair of mutually opposing thin plate sections, afixed section for supporting the thin plate sections, and movablesections disposed at ends of the pair of thin plate sections. In each ofthe thin plate sections, a boundary portion between each of the movablesections and the thin plate sections is thick.

Accordingly, the strength is increased at the boundary portions betweenthe thin plate sections and the movable sections. Thus, it is possibleto enhance the shock resistance.

To thicken the boundary portions, a reinforcing member is preferablyformed at a position corresponding to the boundary portion on an outerside surface of each of the thin plate sections.

The above and other objects, features, and advantages of the presentinvention will become more apparent from the following description whentaken in conjunction with the accompanying drawings in which preferredembodiments of the present invention are shown by way of illustrativeexample.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view illustrating an arrangement of apiezoelectric/electrostrictive device according to a first embodiment;

FIG. 2 is a front view illustrating the piezoelectric/electrostrictivedevice according to the first embodiment;

FIG. 3 is a front view illustrating a piezoelectric/electrostrictivedevice according to a second embodiment;

FIG. 4 is a front view illustrating a piezoelectric/electrostrictivedevice according to a third embodiment; and

FIG. 5 is a front view illustrating a piezoelectric/electrostrictivedevice according to a fourth embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Illustrative embodiments of the piezoelectric/electrostrictive deviceaccording to the present invention will be explained below withreference to FIGS. 1 to 5.

The piezoelectric/electrostrictive device 10 according to the firstembodiment includes a device or element for converting between electricenergy and mechanical energy by using a piezoelectric/electrostrictiveelement. The piezoelectric/electrostrictive device 10 is most preferablyused as an active element such as a variety of actuators and vibrators,especially as a displacement element based on the use of an inversepiezoelectric effect and an electrostrictive effect. Furthermore, thepiezoelectric/electrostrictive device 10 is also preferably used as apassive element such as acceleration sensor elements and shock sensorelements.

As shown in FIG. 1, a piezoelectric/electrostrictive device 10Aaccording to a first embodiment has a ceramic substrate 16 integrallycomprising a pair of mutually opposing thin plate sections 12 a, 12 b,and a fixed section 14 for supporting the thin plate sections 12 a, 12b. Piezoelectric/electrostrictive elements 18 a, 18 b are formed on partof the pair of thin plate sections 12 a, 12 b respectively.

In the piezoelectric/electrostrictive device 10A, the pair of thin platesections 12 a, 12 b are displaced in accordance with the driving of thepiezoelectric/electrostrictive elements 18 a, 18 b, or the displacementof the thin plate sections 12 a, 12 b is detected by thepiezoelectric/electrostrictive elements 18 a, 18 b. Therefore, in theillustrative device shown in FIG. 1, functional sections or operatingsections 19 a, 19 b are constructed by the thin plate sections 12 a, 12b and the piezoelectric/electrostrictive elements 18 a, 18 b.Accordingly, the pair of thin plate sections 12 a, 12 b function asvibrating sections which can be vibrated while supported by the fixedsection 14.

Each of the ends of the pair of thin plate sections 12 a, 12 b isinwardly thick-walled. The thick-walled portions function as movablesections 20 a, 20 b which are displaceable in accordance with thedisplacing action of the thin plate sections 12 a, 12 b. Thethick-walled portions (including projections as the shape of theportions), which protrude mutually inwardly at the ends of the pair ofthin plate sections 12 a, 12 b, are hereinafter referred to as movablesections 20 a, 20 b.

A gap (air) 36 may be interposed between mutually opposing end surfaces34 a, 34 b of the movable sections 20 a, 20 b. Alternatively, althoughnot shown, a plurality of members which are made of the same materialas, or different material from, the constitutive material of the movablesections 20 a, 20 b may be interposed between the end surfaces 34 a, 34b. In this arrangement, the mutually opposing end surfaces 34 a, 34 b ofthe respective movable sections 20 a, 20 b function as attachmentsurfaces 34 a, 34 b. Therefore, the end surfaces 34 a, 34 b are alsoreferred to as attachment surfaces 34 a, 34 b.

The ceramic substrate 16 is composed of a ceramic laminate. For example,several ceramic green sheets are laminated, sintered, and integratedinto the ceramic laminate. This feature will be described later on.

The integrated ceramics as described above scarcely suffers from changesover time, because no adhesive exists on joined portions of therespective parts. Therefore, the joined portions are highly reliable,and the structure is advantageous to ensure the rigidity. Further, suchintegrated ceramics can be produced with ease in accordance with theceramic green sheet-laminating method as described later.

The piezoelectric/electrostrictive elements 18 a, 18 b are preparedseparately from the ceramic substrate 16 as described later. Thepiezoelectric/electrostrictive elements 18 a, 18 b are directly formedon the ceramic substrate 16 by the film formation method.

Each of the piezoelectric/electrostrictive elements 18 a, 18 b comprisesa piezoelectric/electrostrictive layer 22, and a pair of electrodes 24,26 formed on both sides of the piezoelectric/electrostrictive layer 22.The first electrode 24 of the pair of electrodes 24, 26 is formed atleast on each of the pair of thin plate sections 12 a, 12 b.

In the embodiment of the present invention, each of thepiezoelectric/electrostrictive layer 22 and the pair of electrodes 24,26 has a multilayered structure. The first electrode 24 and the secondelectrode 26 are alternately stacked such that a comb-shaped crosssection is obtained, and the first electrode 24 and the second electrode26 are stacked with each other with the piezoelectric/electrostrictivelayer 22 interposed therebetween. As a result, thepiezoelectric/electrostrictive elements 18 a, 18 b are constructed inmultiple stages in the multilayered structure. However, the presentinvention is not limited to the multilayered structure as describedabove. A single-layered structure is also applicable in this invention.

Next, the elements of the piezoelectric/electrostrictive device 10Aaccording to the first embodiment will be explained.

As described above, the movable sections 20 a, 20 b serve as parts whichare operated based on the driving amounts of the thin plate sections 12a, 12 b. A variety of members are attached to the movable sections 20 a,20 b depending on the use of the piezoelectric/electrostrictive device10A. For example, when the piezoelectric/electrostrictive device 10A isused as a displacement element, a shield plate for an optical shutter orthe like is attached to the movable sections 20 a, 20 b. Especially,when the piezoelectric/electrostrictive device 10A is used for thepositioning of a magnetic head of a hard disk drive or for aringing-suppressing mechanism, a member required to be positioned isattached to the movable sections 20 a, 20 b, such as a magnetic head, aslider provided with a magnetic head, and a suspension provided with aslider.

As described above, the fixed section 14 serves as a part which supportsthe thin plate sections 12 a, 12 b and the movable sections 20 a, 20 b.For example, when the piezoelectric/electrostrictive device 10A isutilized to position a magnetic head of a hard disk drive, the fixedsection 14 is supported by, for example, a carriage arm attached to VCM(voice coil motor) or a suspension or a fixed plate attached to thecarriage arm. Accordingly, the entire piezoelectric/electrostrictivedevice 10A is fixed. Further, as shown in FIG. 1, the connectingterminals 28, 30 and other members for driving thepiezoelectric/electrostrictive elements 18 a, 18 b may be arranged onthe fixed section 14.

Materials of the movable sections 20 a, 20 b and the fixed section 14are not specifically limited as long as the materials have certainrigidity. However, the ceramics, to which the ceramic greensheet-laminating method is applicable, can be preferably used asdescribed above.

Specifically, proposed materials include a major component such aszirconia represented by fully stabilized zirconia or partiallystabilized zirconia, alumina, magnesia, silicon nitride, aluminumnitride, or titanium oxide. Further, materials containing a majorcomponent of a mixture of the foregoing components are also proposed.However, it is preferable to use a material containing zirconia,especially fully stabilized zirconia as a major component or a materialcontaining partially stabilized zirconia as a major component, in viewof high mechanical strength and high toughness.

As described above, the thin plate sections 12 a, 12 b serve as partswhich are driven in accordance with the displacement of thepiezoelectric/electrostrictive elements 18 a, 18 b. Each of the thinplate sections 12 a, 12 b is a thin plate-shaped member havingflexibility. The thin plate sections 12 a, 12 b function to amplify theexpansion and shrink displacement of the piezoelectric/electrostrictiveelement 18 a, 18 b arranged on the surface thereof to obtain bendingdisplacement, and transmit the bending displacement to the movablesection 20 a, 20 b. The shape and the material quality of the thin platesections 12 a, 12 b are selected seeking for enough flexibility andmechanical strength not to be broken due to any bending deformation. Theshape and the material quality of the thin plate sections 12 a, 12 b mayalso be appropriately selected in consideration of the responseperformance and the operability of the movable section 20 a, 20 b.

Similar ceramic materials can be preferably used for the material of thethin plate sections 12 a, 12 b, to the ceramic materials of the movablesections 20 a, 20 b and the fixed section 14. A material containingfully stabilized zirconia as a major component or a material containingpartially stabilized zirconia as a major component is used mostpreferably, because the mechanical strength is large even when athin-walled member is formed therefrom, toughness is high, and thereactivity with the piezoelectric/electrostrictive layer and theelectrode material is small.

The fully stabilized zirconia and the partially stabilized zirconia arepreferably fully stabilized or partially stabilized as follows. Chemicalcompounds which fully stabilize and/or partially stabilize zirconiainclude yttrium oxide, ytterbium oxide, cerium oxide, calcium oxide, andmagnesium oxide. Zirconia can be stabilized as desired, by containing atleast one of the foregoing compounds, or by adding the foregoingcompounds in combination as well.

It is desirable that the respective compounds are added in the followingamounts, i.e., 1 to 30 mole %, preferably 1.5 to 10 mole % in the caseof yttrium oxide or ytterbium oxide, 6 to 50 mole %, preferably 8 to 20mole % in the case of cerium oxide, and 5 to 40 mole %, preferably 5 to20 mole % in the case of calcium oxide or magnesium oxide. Among them,it is especially preferable to use yttrium oxide as a stabilizer. Inthis case, it is desirable that yttrium oxide is preferably added in anamount of 1.5 to 10 mole %, and more preferably 2 to 4 mole %. It ispossible to add, for example, alumina, silica, and/or oxide oftransition metal as an additive of a sintering aid or the like within arange of 0.05 to 20% by weight. However when thepiezoelectric/electrostrictive elements 18 a, 18 b are formed bysintering and integrating materials into one unit by the film formationmethod, it is also preferable to add, for example, alumina, magnesia,and/or oxide of transition metal as an additive.

In order to obtain high mechanical strength and stable crystal phase, itis desirable that the average crystal grain size of zirconia is 0.05 to3 μm, preferably 0.05 to 1 μm. As described above, ceramic materialswhich are similar to those of the movable sections 20 a, 20 b and thefixed section 14 can be used for the thin plate sections 12 a, 12 b. Itis preferable that the thin plate sections 12 a, 12 b are made by usingsubstantially the same material. This is advantageous in that thereliability of the joined portions is improved, the strength of thepiezoelectric/electrostrictive device 10A is enhanced, and thecomplexity of production is reduced.

Each of the piezoelectric/electrostrictive elements 18 a, 18 b has atleast the piezoelectric/electrostrictive layer 22 and the pair ofelectrodes 24, 26 for applying the electric field to thepiezoelectric/electrostrictive layer 22. Thepiezoelectric/electrostrictive elements 18 a, 18 b can be used, forexample, as a unimorph type or a bimorph type. However, thepiezoelectric/electrostrictive element of the unimorph type, which isused with the thin plate sections 12 a, 12 b in combination, is moreexcellent in stability of the generated displacement amount, and it ismore advantageous to reduce weight of the device. Therefore, thepiezoelectric/electrostrictive element of the unimorph type is moresuitable for the piezoelectric/electrostrictive device 10A.

It is preferable that the piezoelectric/electrostrictive elements 18 a,18 b are formed on the side surfaces of the thin plate sections 12 a, 12b as shown in FIG. 1, since the thin plate sections 12 a, 12 b can bedriven more greatly.

Piezoelectric ceramic materials are preferably used for thepiezoelectric/electrostrictive layer 22. However, it is also possible touse electrostrictive ceramic materials, ferroelectric ceramic materials,and anti-ferroelectric ceramic materials. When thepiezoelectric/electrostrictive device 10A is used to position themagnetic head of the hard disk drive, for example, it is preferable touse a piezoelectric material having small strain hysteresis, and/or itis preferable to use a material having a coercive electric field of notmore than 10 kV/mm, because the linearity between the displacementamount of the movable section 20 a, 20 b and the driving voltage or theoutput voltage is important.

Specifically, piezoelectric materials may include lead zirconate, leadtitanate, lead magnesium niobate, lead nickel niobate, lead zincniobate, lead manganese niobate, lead antimony stannate, lead manganesetungstate, lead cobalt niobate, barium titanate, sodium bismuthtitanate, potassium sodium niobate, and strontium bismuth tantalate. Oneof these materials can be used, or any appropriate mixture or the likeof them can be used.

Especially, a material containing lead zirconate, lead titanate, or leadmagnesium niobate as a major component, or a material containing sodiumbismuth titanate as a major component is preferably used, since suchmaterials have a high electromechanical coupling factor and a highpiezoelectric constant. Further, the reactivity with the thin platesection (ceramics) 12 a, 12 b of such materials is small when thepiezoelectric/electrostrictive layer 22 is sintered so that a device ofa stable composition can be obtained.

It is also possible to use a ceramic material obtained by adding to thepiezoelectric material described above any one of or a mixture of, forexample, oxide of lanthanum, oxide of calcium, oxide of strontium, oxideof molybdenum, oxide of tungsten, oxide of barium, oxide of niobium,oxide of zinc, oxide of nickel, oxide of manganese, oxide of cerium,oxide of cadmium, oxide of chromium, oxide of cobalt, oxide of antimony,oxide of iron, oxide of yttrium, oxide of tantalum, oxide of lithium,oxide of bismuth, and oxide of stannum.

For example, when lanthanum and/or strontium is contained in majorcomponents such as lead zirconate, lead titanate, and lead magnesiumniobate, coercive electric field and piezoelectric characteristics maybe adjustable, which is advantageous.

It is desirable that a material such as silica which tends to form glassis added in an amount of not more than 2% by weight with respect to thepiezoelectric/electrostrictive material. The reason why is, if such amaterial is added in an amount of not less than 2% by weight, thematerial such as silica, which serves as a sintering aid, is readilyreacted with the piezoelectric/electrostrictive material during the heattreatment of the piezoelectric/electrostrictive layer 22. As a result,the composition is varied, and piezoelectric characteristics aredeteriorated. If a suitable amount of silica is added, the sinteringcharacteristics of the piezoelectric/electrostrictive member areimproved, i.e., the piezoelectric/electrostrictive member may besintered evenly.

On the other hand, it is preferable that the pair of electrodes 24, 26of the piezoelectric/electrostrictive elements 18 a, 18 b are made of ametal which is solid at room temperature and which is excellent inconductivity. Materials usable for the pair of electrodes 24, 26 includemetal such as aluminum, titanium, chromium, iron, cobalt, nickel,copper, zinc, niobium, molybdenum, ruthenium, palladium, rhodium,silver, stannum, tantalum, tungsten, iridium, platinum, gold, and lead,and alloys thereof. Further, it is also preferable to use a cermetmaterial obtained by dispersing the same materials as those of thepiezoelectric/electrostrictive layer 22 and/or the thin plate sections12 a, 12 b in one of the metals or the alloy described above.

The material of the electrodes 24, 26 of thepiezoelectric/electrostrictive element 18 a, 18 b is selected anddetermined depending on the method of forming thepiezoelectric/electrostrictive layer 22. For example, when thepiezoelectric/electrostrictive layer 22 is formed by sintering on thefirst electrode 24 after forming the first electrode 24 on the thinplate section 12 a, 12 b, it is necessary for the first electrode 24 touse a high melting point metal which does not change at the sinteringtemperature of the piezoelectric/electrostrictive layer 22. The highmelting point metal includes platinum, palladium, platinum-palladiumalloy, and silver-palladium alloy. However, the electrode on theoutermost layer, which is formed on the piezoelectric/electrostrictivelayer 22 after forming the piezoelectric/electrostrictive layer 22, canbe formed at a relatively low temperature. Therefore, it is possible touse a low melting point metal as a major component of the electrode onthe outermost layer, including aluminum, gold, and silver.

Each thickness of the electrodes 24, 26 may be a factor to considerablydecrease the displacement of the piezoelectric/electrostrictive element18 a, 18 b. Therefore, especially for the electrode formed aftersintering the piezoelectric/electrostrictive layer 22, it is preferableto use a material such as an organic metal paste with which a dense andthinner film can be obtained by sintering, including gold resinatepaste, platinum resinate paste, and silver resinate paste.

The piezoelectric/electrostrictive device 10A according to the firstembodiment can be preferably used for a variety of sensors includingultrasonic wave sensors, acceleration sensors, angular velocity sensors,shock sensors, and mass sensors. The piezoelectric/electrostrictivedevice 10A according to the first embodiment is further advantageous inthat the sensitivity of the sensor can be easily adjusted byappropriately adjusting the size of an object attached between the endsurfaces 34 a, 34 b or between the thin plate sections 12 a, 12 b.

As for the method of forming the piezoelectric/electrostrictive element18 a, 18 b on the surface of the thin plate section 12 a, 12 b, it ispossible to use a thick film formation method such as dipping method,application method, and electrophoresis method and a thin film formationmethod such as ion beam method, sputtering method, vacuum deposition,ion plating method, chemical vapor deposition method (CVD), and plating,as well as the screen printing method described above.

When the piezoelectric/electrostrictive elements 18 a, 18 b are formedby using one of the film formation methods as described above, thepiezoelectric/electrostrictive elements 18 a, 18 b and the thin platesections 12 a, 12 b can be joined and arranged integrally without usingany adhesive. It is possible to ensure the reliability and thereproducibility of the device, and it is possible to facilitateintegration thereof.

In this embodiment, it is preferable that thepiezoelectric/electrostrictive elements 18 a, 18 b are formed by thethick film formation method, for the following reason. When the thickfilm formation method is used especially for the formation of thepiezoelectric/electrostrictive layer 22, the film can be formed byusing, for example, a paste, a slurry, a suspension, an emulsion, or asol, containing grains or powder of piezoelectric ceramics having anaverage grain size of 0.01 to 5 μm, preferably 0.05 to 3 μm, as a majorcomponent. When the film obtained as described above is sintered, it ispossible to obtain good piezoelectric/electrostrictive characteristics.

The electrophoresis method is advantageous since the film can be formedat a high density with a high shape accuracy. The screen printing methodis advantageous to simplify production steps, because the film formationand the pattern formation can be performed simultaneously.

As shown in FIGS. 1 and 2, in the piezoelectric/electrostrictive device10A according to the first embodiment, the portions of the movablesections 20 a, 20 b opposed to the fixed section 14 are formed in astepped form. Steps 210 are provided on the respective attachmentsurfaces 34 a, 34 b. Cutouts (cutaways) 212 are formed at portions ofthe inner wall of the fixed section 14 near the thin plate sections 12a, 12 b. Further, steps 214 are provided on inner walls of the cutouts212 disposed on the sides of the thin plate sections 12 a, 12 b. Theattachment surfaces 34 a, 34 b of the movable sections serve as portionsto which a component may be attached depending on the use of thepiezoelectric/electrostrictive device 10A.

In this the structure as described above, the stress is dispersed at theboundary portions between the thin plate sections 12 a, 12 b and themovable sections 20 a, 20 b and at the boundary portions between thethin plate sections 12 a, 12 b and the fixed section 14. Accordingly, itis possible to decrease the stress which would be otherwise concentratedon each spot. Further, it is possible to enhance shock resistance.

Each number of steps 210, 214 is preferably not less than 1 in eachcase. With reference to FIG. 2, the height H of the step 210, 214 isdesirably not more than the thickness d of the thin plate section 12 a,12 b, and it is preferably not more than d/2. Specifically, the height His desirably within a range of 2 μm to 100 μm and preferably within arange of 5 μm to 70 μm.

With reference to FIG. 2, the length L of the step 210 is desirably notless than d/2. Specifically, the length L is not less than 2 μm,preferably not less than 10 μm, and more preferably not less than 50 μm.If the length L is too long, the displacement is decreased. However, theresonance frequency tends to increase inversely.

In order to produce the piezoelectric/electrostrictive device 10A havingthe steps 210, 214 as described above, the ceramic substrate 16 isprepared by sintering the ceramic green laminate. Alternatively, theceramic substrate 16 is prepared by forming a pattern on a green sheetby the partial printing, thereafter laminating the green sheets toprepare the ceramic green laminate, and sintering the ceramic greenlaminate.

Next, as shown in FIG. 3, a piezoelectric/electrostrictive device 10Baccording to a second embodiment is structured in approximately the samemanner as the piezoelectric/electrostrictive device 10A according to thefirst embodiment described above. The differences between theseembodiments are as follows. Boundary sections 216 between the movablesections 20 a, 20 b and the thin plate sections 12 a, 12 b are formed ina curved shape. Boundary sections 218 are formed in a curved shape incutouts (cutaways) 212 provided between the fixed section 14 and thethin plate sections 12 a, 12 b. Particularly, the boundary sections 218are formed between the bottoms of the cutouts 212 and the inner walls ofthe cutouts 212 disposed near the thin plate sections 12 a, 12 b.

In this structure, it is possible to disperse the stress at the boundarysections 216 between the thin plate sections 12 a, 12 b and the movablesection 20 a, 20 b and at the boundary sections 218 between the thinplate sections 12 a, 12 b and the fixed section 14. Thus, it is possibleto enhance the shock resistance.

The radius of curvature R of the curved sections (boundary sections 216,218) is desirably not less than 5 μm, preferably not less than 10 μm,and more preferably not less than 20 μm.

In order to produce the piezoelectric/electrostrictive device 10B havingthe curved sections 216, 218 as described above, paste application isutilized. That is, the curved sections 216, 218 are formed by applyingor dipping the paste of ceramic material onto corners (portions to beformed into the curved section 216, 218 later) when the green sheets arelaminated. Accordingly, the paste forms a curved shape in accordancewith surface tension. After that, the green sheets are laminated toprepare the ceramic green laminate, followed by sintering. Accordingly,it is possible to obtain the ceramic substrate 16 having the curvedsections 216, 218 as shown in FIG. 3.

Another method is also proposed as follows. At first, the ceramicsubstrate 16 is prepared. After or during the preparation of the ceramicsubstrate 16, the paste or the like of resin, glass, or metal is pouredinto portions to be formed into the curved sections 216, 218 so thatcorners are formed in a curved shape.

Next, as shown in FIG. 4, a piezoelectric/electrostrictive device 10Caccording to a third embodiment is structured in approximately the samemanner as the piezoelectric/electrostrictive device 10A according to thefirst embodiment described above. The differences between theseembodiments are as follows. The angle θ of the boundary sections 216between the movable sections 20 a, 20 b and the thin plate sections 12a, 12 b is formed to be an obtuse angle. The angle of the boundarysections 218 in cutouts (cutaways) 212 provided between the fixedsection 14 and the thin plate sections 12 a, 12 b is formed to an obtuseangle. Particularly, the angle of the boundary sections 218 between thebottoms of the cutouts 212 and the inner walls of the cutouts 212disposed near the thin plate sections 12 a, 12 b is formed to be anobtuse angle.

In this structure, the number of stress concentration points isincreased and they are dispersed at the boundary sections 216 betweenthe thin plate sections 12 a, 12 b and the movable sections 20 a, 20 band at the boundary sections 218 between the thin plate sections 12 a,12 b and the fixed section 14 in the same manner as in the firstembodiment. Accordingly, it is possible to decrease the stress whichwould be otherwise concentrated on each spot, and it is possible toenhance the shock resistance.

The angle of the boundary sections 216, 218 is desirably larger than90°, preferably not less than 135°.

In order to prepare the piezoelectric/electrostrictive device 10Caccording to the third embodiment, a paste is pattern-printed on thegreen sheet to be formed into the thin plate section 12 a, 12 b. The endof the pattern of the printed paste forms a tapered shape.

In other words, the green sheets are laminated so that the taperedportions of the patterns become the boundary sections 216, 218 toprepare the ceramic green laminate, and then sintered into the ceramicsubstrate 16. Accordingly, the angles of the boundary sections 216, 218on the ceramic substrate 16 are formed to be the obtuse angles.

The angles can be controlled by adjusting the viscosity of the pasteand/or the printing condition. Alternatively, the control can berealized by superimposing a plurality of green sheets having differentlengths. The paste may be made from the same ceramic material as thematerial of the ceramic substrate 16. Alternatively, the paste may bemade from another ceramic material, a high melting point metal, or acermet.

As shown in FIG. 4, the piezoelectric/electrostrictive device 10Caccording to the third embodiment has end surfaces 222 of the movablesections 20 a, 20 b which are deviated toward the fixed section ascompared with tip surfaces 224 of the thin plate sections 12 a, 12 b.Accordingly, when a component is attached between the attachmentsurfaces 34 a, 34 b, the movable sections 20 a, 20 b determine theamount (thickness) and the position (adhesion area) of adhesive to beused. Further, the portions of adhesive interposing between the thinplate sections 12 a, 12 b and the component, also function as themovable sections. The boundary surfaces between the adhesive and thecomponent also function as the attachment surfaces of the movablesections.

Next, as shown in FIG. 5, a piezoelectric/electrostrictive device 10Daccording to a fourth embodiment is structured in approximately the samemanner as the piezoelectric/electrostrictive device 10A according to thefirst embodiment described above. The differences between theseembodiments are as follows. The thickness of boundary sections 216 ofthe thin plate sections 12 a, 12 b between the movable sections 20 a, 20b and the thin plate sections 12 a, 12 b is large.

To thicken the boundary sections 216, it is preferable to formreinforcing members 220 on the side surfaces of the thin plate sections12 a, 12 b corresponding to the boundary sections 216. Specifically,after the ceramic substrate 16 is prepared, for example, a paste for thereinforcing members 220 is printed by the screen printing, followed bysintering. Alternatively, the paste for the reinforcing members 220 maybe printed on predetermined positions of the ceramic green laminate,followed by sintering to prepare the ceramic substrate 16.

The reinforcing member 220 may be made of the same ceramic material asthat for the ceramic substrate 16. Alternatively, the reinforcing member220 may be made of another ceramic material, metal, glass, or resin.

The piezoelectric/electrostrictive devices 10A to 10D described abovecan be utilized as active elements including various transducers,various actuators, frequency region functional parts (filters),transformers, and vibrators, resonators, oscillators, and discriminatorsfor communication or power generation, as well as sensor elements ofvarious sensors including ultrasonic wave sensors, acceleration sensors,angular velocity sensors, shock sensors, and mass sensors. Especially,the piezoelectric/electrostrictive devices 10A to 10D can be preferablyutilized for various actuators to be employed in mechanisms foradjusting angles of, and for adjusting positions and displacement ofvarious precision components in optical instruments, precisioninstruments and the like.

It is a matter of course that the piezoelectric/electrostrictive deviceaccording to the present invention is not limited to the embodimentsdescribed above, which may be embodied in other various forms withoutdeviating from the gist or essential characteristics of the presentinvention.

1. A piezoelectric/electrostrictive device comprising a ceramicsubstrate having a pair of mutually opposing thin plate sections, afixed section for supporting said thin plate sections, and movablesections disposed at ends of said pair of thin plate sections, whereinat least one step is formed on an inner wall of at least one of saidthin plate sections, said at least one step being formed between saidthin plate sections and said movable sections, wherein said step isintegrated into one unit together with at least one of said movablesections and has a height which is not more than a thickness of each ofsaid thin plate sections.
 2. The piezoelectric/electrostrictive deviceaccording to claim 1, wherein said height of said step is not more thand/2 provided that said thickness of each of said thin plate sections isd.
 3. The piezoelectric/electrostrictive device according to claim 1,wherein said height of said step is 2 μm to 100 μm.
 4. Thepiezoelectric/electrostrictive device according to claim 1, wherein saidstep has a length which is not less than d/2 provided that a thicknessof each of said thin plate sections is d.
 5. Thepiezoelectric/electrostrictive device according to claim 4, wherein saidlength of said step is not less than 2 μm.
 6. Apiezoelectric/electrostrictive device comprising a ceramic substratehaving a pair of mutually opposing thin plate sections, a fixed sectionfor supporting said thin plate sections, and movable sections disposedproximate to ends of said pair of thin plate sections, wherein saidmovable sections are spaced a predetermined distance away from tipsurfaces of each of said thin plate sections toward said fixed section.